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DMN1019UFDE
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
12
±8
Units
V
V
Continuous Drain Current (Note 5) V GS = 4.5V
Maximum Continuous Body Diode Current
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Steady
State
t<5s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I S
I DM
11
9
14
11
3.0
100
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t<5s
T A = +25°C
T A = +70°C ?
Steady state
t<5s
P D
R ? JA
P D
R ? JA
R ? Jc
T J, T STG
0.69
0.44
182
118
2.17
1.38
58
38
10
-55 to +150
W
°C/W
W
°C/W
°C
R ? JA(t) (t) * R ? JA
100
90
80
70
Single Pulse
R ? JA = 178 ? C/W
=r
T J - T A = P * R ? JA(t)
DUT on MRP
100
10
R DS(on)
Limited
P W = 10μ s
60
DC
50
40
1
P W = 10s
P W = 1s
P W = 100ms
30
20
0.1
T J(max) = 150°C
T A = 25°C
P W = 10ms
P W = 1ms
P W = 100μs
10
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single PulseMaximum Power Dissipation
Single Pulse
DUT on 1 * MRP Board
V GS = 8V
0.01
0.01 0.1 1 10
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
DMN1019UFDE
D atasheet number: DS35561 Rev. 5 - 2
2 of 7
www.diodes.com
October 2013
? Diodes Incorporated
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